World-Class Resources > CNSE Wafer Processing Research & Development > Etch Services > Line/Space Gate with Spacer Etch Process
Line/Space Gate with Spacer Etch Process
- Polysilicon or a-Silicon Etch
- non-Hard Mask
- 1000,1200 or 1500A Polysilicon
- 20A Thermal Oxide
- Hard mask
- 300 or 400A PECVD Oxide or RTCVD Nitride
- 1000, 1200 or 1500A a-Silicon
- 100A PVD TiN
- 20, 25 or 30A HfOx