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3D
CNSE has the capability to bond wafer stacks of 150 mm, 200 mm and 300 mm substrates. 3-D wafer integration promises to increase the density of devices 3 dimensionally and is not limited by feature size reduction. Bonding and alignment is accomplished with a suite of EV Group (EVG) mask/wafer aligners and wafer bonders. The CNSE 300 mm bonder has the capability to perform both wafer to wafer bonding, as well as die to wafer bonding. Three dimensional integration processes supported for substrates ranging from 150 mm to 300 mm include Copper-Copper, Benzocyclobutene (BCB), Oxide-Oxide and Anodic Bonding.

CNSE 200 mm Aligner and Bonder Facilities
EVG 640 Aligner and EVG 501 Bonder
  • Alignment accuracy: <2 μm
  • Temperature up to 550 C, piston force up to 7 kN 
  • Processes: Cu-Cu, BCB, Oxide-Oxide, Anodic and others supported 
  • Stack thickness < 4 mm

EVG 640 & EVG 501 Bonder 

CNSE 300 mm Aligner and Bonder Facilities
EVG SmartView Aligner and EVG 540 Bonder
  • Alignment Accuracy: <1.5 μm
  • Temperature up to 550 C, Piston force up to 40 kN 
  • Wafer-Wafer, Die-Wafer 
  • Cu-Cu, BCB, Oxide-Oxide, and others supported 
  • N2H2 Forming Gas Environment
EVG1
EVG

 

 

 

 

 

 

 

 

Example of a 3D project 3D IR Focal Plane Array

3 Wafer Silicon Stack bonded
3 Wafer Silicon Stack bonded with BCB

200mm bonded wafer1
200mm bonded wafer2
200 mm bonded wafers metalized with metal contacts formed through lift-off

Fully integrated 3D
Fully Integrated 3D 256 x 256 FPA