| |
| RN2-12-11 | Combination Metal/Poly gate stack for FINFET | Vidya Kaushik |
RN2-11-16 | Carbon nanotube growth on silicon and silicon nanowire substrates via
simultaneous delivery of carbon and catalyst via plasma enhanced atomic
layer deposition (PEALD) | Jae Ho Lee; Issac Lund; Eric Eisenbraun; Robert Geer |
| S846-320 | Process for Etching, Depositing, and Treating Materials Using a Flowing Afterglow (FA) Plasma Technique | Corbett, James W.; Yencha, Andrew J. |
| S839-320 | Process for Focusing Gases to Etch and/or Deposit Materials and Confine Reactions to Localized Sites | Corbett, James W.; Gibson, Walter M.; Kaloyeros, Alain E. |
| S836-320 | Process for Making Improved Silicon-Germanium Alloys by Low-Temperature Metal-Organic Chemical Vapor Deposition | Kaloyeros, Alain E.; Corbett, James W.; Barbero, Christopher; Toscano, Paul J. |
| S829-320 | Process to Etch and/or Deposit Features with Nanometer Dimensions | Corbett, James W.; Kaloyeros, Alain E.;Gibson, Walter M. |
| S781-320 | Processes for Generating a Novel Electrode for use in Etching, Deposition and Breakdown Systems | Corbett, James W.; Kaloyeros, Alain E. |
| S742-320 | Improved Process for Producing Amorphous Silicon (a-Si) | Corbett, James W.; Kaloyeros, Alain E.; Toscano, Paul J. |
| S740-320 | Process for the Growth of an Overlayer of Crystalline or Polycrystalline Material | Corbett, James W.; Kaloyeros, Alain E. |
| S714-320 | Novel Process for Nanometer Dimension Etched and Deposition of Devices and Components | Corbett, James W.; Kaloyeros, Alain E. |
| RN2-09-16 | Method of creating Cs-free III-Nitride based Photocathodes | Shahedipour-Sandvik, Fatemeh; Tripathi, Neeraj |
| RN2-09-11 | In-Situ Confined Plasma Channel Source for Enhanced Thin Films Uniformity | Stewart, Stephen L. |
| RN2-09-08 | Bandgap Engineering in Mono-and Multi-layer Graphene via formation of Interface charges | Shahedipour-Sandvik, Fatemeh |
| RN2-09-02 | nMOS-Junction Logic Design | Wang, Wei |
| R2-02-03 | Real Time Processing Capillary Electrophoresis Method and Fabrication Using MEMS Technology | Dong ,Yan; Xu, Bai; Castracane, James |
| R99-09-320 | Silver Precursors for CVD Processes | Welch, John T.;Ngo, Silvana C.;Banger, Kulbinder K. |
| R99-08-320 | MOCVD Processes Using Precursors Based on Organometalloid Ligands | Welch, John T., Claessen, Rolf;Banger, Kulbinder K.;Kaloyeros, Alain E.;Toscano, Paul J.;Kornilov, Andrei |
| R99-07-320 | Chemical Source and Processes for Tungsten Nitride Deposition | Kaloyeros, Alain
Arkles, Barry |
| R98-02-320.2 | MOCVD Precursors based on Organometalloid Ligands | Welch, John T. Claessen, Rolf Banger, Kulbinder K. Toscano, Paul J., Kornilov, Andrei |
| R98-02-320.1 | MOCVD Precursors based on Organometalloid Ligands | Welch, John T. Claessen, Rolf Banger, Kulbinder K. Toscano, Paul J., Kornilov, Andrei |
| R97-04-320 | Slicon Based Films Formed from Iodosilane Precursors and Method of Making the Same | Kaloyeros, Alain E., Arkles, Barry (Gelest), Chen, Xiaomeng, Endisch, Denis, Lin, Xian |
| R97-03-320 | Silicon Nitrogen-Based Films and Method of Making the Same | Kaloyeros, Alain E., Arkles, barry (Gelest) |
| R96-04-320.2 | Method for Chemical Vapor Deposition of Copper-Based Films and Copper Source Precursors for the Same | Kaloyeros , Alain E.; Eisenbraun, Eric T.; Zheng, Bo |
| R96-04-320.1 | Method for Chemical Vapor Deposition of Copper-Based Films and Copper Source Precursors for the Same | Kaloyeros, Alain
Arkles, Barry |
| R905-320 | A Universal Chemical Vapor Deposition Process for the Selective Growth of Metals | Kaloyeros, Alain E. |
| R904-320 | Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials | Kaloyeros , Alain E.; Eisenbraun, Eric T.; Zheng, Bo |
| R855-320 | A Temperature-Controlled Chemical Vapor Deposition (TC-CVD) Process for the Growth of High Temperature Superconductors | Kaloyeros, Alain E.; Feng, Aiguo |
| R743-320 | Metal-Organic Vapor Phase Epitaxy (Movpe) of High Temperature Superconductors | Kaloyeros, Alain E.; Corbett, James W. |
| R741-320 | Low-Temperature Metal-Organic Chemical Vapor Deposition (Ltmocvd) of Copper for Microelectronic Device Applications | Kaloyeros, Alain E.; Toscano, Paul J.; Corbett, James W. |
| R239-320 | Method for Introducing Hydrogen into Semiconductors | Corbett, James W. |
| R2-08-16 | Split gate method for MOSFET | Wang, Wei; Hartley, John |
| R2-07-10 | Controloble Surface Roughness | Brainard, Robert; Hirschbein, Bernard; Gadre,Anand |
| R2-06-15 | Direct Closed Loop Proportional-Integral- Derivaive (PID) Substraite Temperature Control for a Molecular Beam Epilaxy (MBE) Machine Via Input from a Band-Edge temperature measurement system | LaBella, Vincent; Awo-Affouda, Chaffra; Stollenwerk, Andrew |
| R2-05-03 | Above Room temperature Ferromagnetic Silicon | LaBella, Vincent Patrick; Bolduc, Martin ; Awo-Affouda, Chaffra; Huang, Mengbing |
| R2-03-10 | MEMS Structure with Anodically Bonded Silicon-on-Insulator Substrate | Xu, Bai, Tokranova, Natalya; Castracane James |
| R2-03-07 | Methods for forming palladium alloy thin films and optical hydrogen sensors employing palladium alloy thin films | Carpenter, Michael A.; Zhao, Zhouying |
| R2-02-04 | Substrate Engineering Technique for Low Dislocation Defect III-Nitride Wideband Gap Material (AllnGaN) Growth on Silicon Substrate | Shahedipour-Sandvik, Fatemeh; Wu, Di, Kahn, Muhammad Jamil |
| R2-00-02 | Interlayer Mediated Epitaxy of Cobalt Silicide from Low Temperature Chemical Vapor Deposition of Cobalt | Kaloyeros, Alain E.;Arkles, Barry (Gelest);Londergran, Ana |