| |
RN2-12-07 | Method for reducing charging in the CD SEM | Melvin “Warren” Montgomery, Cecelia Montgomery (SEMATECH), Ben Bunday (SEMATECH) |
RN2-11-16 | Carbon nanotube growth on silicon and silicon nanowire substrates via
simultaneous delivery of carbon and catalyst via plasma enhanced atomic
layer deposition (PEALD) | Jae Ho Lee; Issac Lund; Eric Eisenbraun; Robert Geer |
| S846-320 | Process for Etching, Depositing, and Treating Materials Using a Flowing Afterglow (FA) Plasma Technique | Corbett, James W.; Yencha, Andrew J. |
| S839-320 | Process for Focusing Gases to Etch and/or Deposit Materials and Confine Reactions to Localized Sites | Corbett, James W.; Gibson, Walter M.; Kaloyeros, Alain E. |
| S836-320 | Process for Making Improved Silicon-Germanium Alloys by Low-Temperature Metal-Organic Chemical Vapor Deposition | Kaloyeros, Alain E.; Corbett, James W.; Barbero, Christopher; Toscano, Paul J. |
| S740-320 | Process for the Growth of an Overlayer of Crystalline or Polycrystalline Material | Corbett, James W.; Kaloyeros, Alain E. |
| R2-02-03 | Real Time Processing Capillary Electrophoresis Method and Fabrication Using MEMS Technology | Dong ,Yan; Xu, Bai; Castracane, James |
| R99-09-320 | Silver Precursors for CVD Processes | Welch, John T.;Ngo, Silvana C.;Banger, Kulbinder K. |
| R99-08-320 | MOCVD Processes Using Precursors Based on Organometalloid Ligands | Welch, John T., Claessen, Rolf;Banger, Kulbinder K.;Kaloyeros, Alain E.;Toscano, Paul J.;Kornilov, Andrei |
| R99-07-320 | Chemical Source and Processes for Tungsten Nitride Deposition | Kaloyeros, Alain
Arkles, Barry |
| R98-02-320.2 | MOCVD Precursors based on Organometalloid Ligands | Welch, John T. Claessen, Rolf Banger, Kulbinder K. Toscano, Paul J., Kornilov, Andrei |
| R98-02-320.1 | MOCVD Precursors based on Organometalloid Ligands | Welch, John T. Claessen, Rolf Banger, Kulbinder K. Toscano, Paul J., Kornilov, Andrei |
| R97-04-320 | Slicon Based Films Formed from Iodosilane Precursors and Method of Making the Same | Kaloyeros, Alain E., Arkles, Barry (Gelest), Chen, Xiaomeng, Endisch, Denis, Lin, Xian |
| R97-03-320 | Silicon Nitrogen-Based Films and Method of Making the Same | Kaloyeros, Alain E., Arkles, Barry (Gelest) |
| R96-04-320.2 | Method for Chemical Vapor Deposition of Copper-Based Films and Copper Source Precursors for the Same | Kaloyeros , Alain E.; Eisenbraun, Eric T.; Zheng, Bo |
| R96-04-320.1 | Method for Chemical Vapor Deposition of Copper-Based Films and Copper Source Precursors for the Same | Kaloyeros, Alain
Arkles, Barry |
| R905-320 | A Universal Chemical Vapor Deposition Process for the Selective Growth of Metals | Kaloyeros, Alain E. |
| R904-320 | Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials | Kaloyeros , Alain E.; Eisenbraun, Eric T.; Zheng, Bo |
| R855-320 | A Temperature-Controlled Chemical Vapor Deposition (TC-CVD) Process for the Growth of High Temperature Superconductors | Kaloyeros, Alain E.; Feng, Aiguo |
| R743-320 | Metal-Organic Vapor Phase Epitaxy (Movpe) of High Temperature Superconductors | Kaloyeros, Alain E.; Corbett, James W. |
| R2-08-18 | Fluidic Devices for Cell Encapsulation and methods of Making Same of Biological applications | Bergkvist, Magnus; Cady ,Nathaniel; Gracias, Allison; Xie, Yubling |
| R2-08-03 | Environmental X-ray Photoelectron Spectroscopy | Theil, Bradley |
| R2-07-17 | High Efficiency Method for Surface Contamination Studies | Denbeaux,Gregory; Goodwin,Francis; Garg, Rashi; |
| R2-07-10 | Controloble Surface Roughness | Brainard, Robert; Hirschbein, Bernard; Gadre,Anand |
| R2-06-15 | Direct Closed Loop Proportional-Integral- Derivaive (PID) Substraite Temperature Control for a Molecular Beam Epilaxy (MBE) Machine Via Input from a Band-Edge temperature measurement system | LaBella, Vincent; Awo-Affouda, Chaffra; Stollenwerk, Andrew |
| R2-06-01.2 | Processes for the Growth of Ruthenium containing layers using Atomic Layer Deposition
Renamed: Ruthenium Precursors and Intermediates for Depostion Processes, Their production and method of use
Renamed: Ruthenium Precursors and Intermediates for Plasma-Enhanched LAD | Eisenbraun, Eric
Li, Min
Berliner, Nathaniel
co-inventors from Honeywell, U. of Iowa and U of Helsinki |
| R2-06-01.1 | Ruthenium Precursors and Intermediates for Plasma-Enhanched LAD | Eisenbraun, Eric; Li, Min; Berliner, Nathaniel; co-inventors from Honeywell, U. of Iowa and U of Helsinki |
| R2-05-23 | Oxidation liftoff technology for ultra thin active layer transfere and fabrication of silicon based laser diodes | Otkyabrsky, Serge; Yakimov, Michael |
| R2-03-07 | Methods for forming palladium alloy thin films and optical hydrogen sensors employing palladium alloy thin films | Carpenter, Michael A.; Zhao, Zhouying |
| R2-02-07 | Oxidation Lift-off method | Oktyabrsky, Serge; Yakimov, Micahel |
| R1183-320 | Methodology for In-Situ Doping of Auminum Coatings | Kaloyeros, Alain E., Knorr, Andreas, Faltermeier, Jonathan |
| R1145-320 | Conformal Pure and Doped Aluminum Coatings and a Methodology and Apparatus for their Preparation | Kaloyeros, Alain E., Faltermeier, Jonathan |
| R1143-320.2 | Tantalum and Tantalum-Based Films Formed Using Flourine-Containing Source Precursors and Methods of Making the Same | Kaloyeros, Alain
Arkles, Barry |
| R1143-320.1 | Tantalum and Tantalum-Based Films and Methods of Making the Same | Kaloyeros, Alain; Arkles, Barry |