About Us > Faculty & Staff > Technical Staff > Qiuyi Ye

Derivative Device Engineer 

Professional Background:

• Stanford Research Institute (SRI) International / Sarnoff.
  • 2010-2011: Principal process specialist for Advanced Microcircuit Emulation program.
• IBM Corp. 
  • 2006-2009: Device Engineer for Tech transferring 65/45nm SOI and 65nm LP CMOS technology between IBM and Chartered Semiconductor.
  • 2003-2006: Device Engineer for device design, characterization and modeling with 90/65nm SOI CMOS technology development.
• Infineon Technology. 
  • 2000-2003: Staff Engineer for development of 120nm / 90nm CMOS logic technology.
  • 1997-2000: Device Engineer for device design, characterization and modeling in 0.25um/0.2um/0.15um DRAM technology development.
• Motorola Inc.
  • 1994-1997: Device Engineer, responsible for develop embedded nonvolatile memory such as EPROM, EEPROM Flash memories in micro-controller products.
• Energy Conversion Devices Inc.
  • 1991-1994: Senior Research Scientist: responsible for developing nonvolatile memory ReRAM using phase change material (chalcogenide).

Awards:

• Author/co-author of more than 30 technical papers on Semiconductor device physics and micro-electronic manufacturing.
• Co-inventor of 15 US patents on nonvolatile memory. DRAM, SRAM and micro-electronic manufacturing.

Education:

• Ph.D. In Solid State Physics, Technical University of Munich, Munich, Germany, 1989
• M.S. in Solid State Physics, Shanghai Jiao-tong University, Shanghai, China , 1985
• B.S. in Solid State Physics, Shanghai University, Shanghai, China , 1982.

Job Responsibilities:

Dr. Ye supports activities associated with the development / research of derivative devices and technologies used to build CNSE’s derivatives technology business.